The document describes the features and characteristics of the March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, including maximum ratings, operating temperature range, thermal resistance, etc.
The FDN358P is a P‑Channel logic‑level enhancement mode power MOSFET offered in a SuperSOT‑3 package. It is designed for low‑voltage, battery‑powered applications where fast switching and low on‑state resistance are required.
The document provides absolute maximum ratings, electrical and thermal characteristics, typical performance graphs, and detailed specifications such as drain‑source voltage, gate‑source voltage, current ratings, and on‑resistance values.
| Drain‑Source Voltage (VDS) | -30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 15 A |
| Pulsed Drain Current (ID) | 5 A |
| Maximum Power Dissipation | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance | 250 °C/W |
| Junction‑to‑Case Thermal Resistance | 75 °C/W |
| On‑Resistance (RDS(on)) at VGS = -10 V, ID = -1.5 A | 0.125 Ω |
The device is rated for a maximum drain‑source voltage of -30 V.
It can conduct a continuous drain current of 15 A.
Typical on‑resistance is about 0.125 Ω under those conditions.