The FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET is produced by Fairchild Semiconductor and uses PowerTrench technology to achieve extremely low RDS(ON) and low gate charge. It is suitable for applications such as DC/DC converters and load switches.
This document is a technical datasheet for the Fairchild Semiconductor FDN339AN, an N-Channel 2.5V specified PowerTrench MOSFET. The device utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge for superior switching performance.
Key features include high power and current handling capability, making it suitable for applications such as DC/DC converters and load switches. The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, and package ordering information.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 v |
| Pulsed Drain Current | 20 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 3 A and a pulsed drain current of 20 A.
The maximum power dissipation for single operation is 0.5 W.
The device operates and stores within a junction temperature range of -55 to +150 °C.