The FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET is a high-performance trench technology N-channel MOSFET from Fairchild Semiconductor. It features extremely low on-state resistance and low gate charge, making it ideal for applications such as DC/DC converters and load switches.
The FDN339AN is a Fairchild Semiconductor N‑Channel MOSFET built with PowerTrench technology to provide low on‑state resistance and low gate charge for high‑performance switching. The document lists absolute maximum ratings, typical electrical characteristics, and recommended packaging options.
Package information covers the SuperSOT‑3 tape‑and‑reel format, dimensions, and handling guidelines, while the trademark and disclaimer sections outline Fairchild’s legal notices and life‑support policy.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +8 V |
The MOSFET can withstand up to 20 V drain‑source voltage.
The gate‑source voltage is limited to +8 V.