SPP15P10P is a P-channel enhancement mode MOSFET produced by Siemens. Its maximum voltage is -100V, the minimum on-resistance is 0.24 Ω, and the maximum current is -15A.
The SPP15P10P is a P‑channel enhancement‑mode SIPMOS small‑signal transistor. The datasheet provides product summary, maximum ratings, thermal and electrical characteristics, as well as typical performance curves such as output, transfer and on‑state resistance.
Key sections cover continuous and pulsed drain current, breakdown voltage, gate threshold, power dissipation, safe operating area and detailed capacitance and charge parameters. Contact and warranty information for Infineon Technologies AG is listed on the final page.
| Continuous drain current (Id) at 25 °C | 15 A |
|---|---|
| Pulsed drain current (Id,pulse) | 60 A |
| Drain‑source breakdown voltage (VDS) | ~100 V |
| Gate threshold voltage (VGS(th)) typical | 2.1 V |
| Power dissipation (PD) at 25 °C | 128 W |
The device can conduct up to 15 A continuously at 25 °C.
The drain‑source breakdown voltage is approximately 100 V.
It can dissipate up to 128 W at 25 °C.
The typical gate threshold voltage is 2.1 V.