Infineon SPP15P10P SIPMOS Small‑Signal Transistor Datasheet

This document describes the features and characteristics of the SPP15P10P SIPMOS small-signal transistor, including P-Channel, enhancement mode, avalanche rated, and dv/dt rated.


Infineon SPP15P10P SIPMOS Small‑Signal Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
99 KB
Published
05 April, 2012
Updated
29 September, 2023
MD5 checksum
08695C462528265BED44F489A39CFCC0

About this manual

The SPP15P10P is a P‑channel SIPMOS small‑signal transistor offered by Infineon Technologies. It is intended for use in applications requiring high voltage handling, low on‑resistance and fast switching performance.

The document lists maximum ratings, thermal characteristics, dynamic parameters, and characteristic curves such as output, transfer and on‑state resistance. Key specifications include drain current, avalanche energy, power dissipation and temperature range, with detailed graphs for design reference.

What's inside

  • Product Summary
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Power Dissipation
  • Safe Operating Area
  • Output Characteristics
  • Transfer Characteristics
  • Drain‑Source On‑Resistance
  • Capacitances

Specifications

Pulsed drain current (Id,puls)-60 A
Avalanche energy (single pulse)230 mJ
Power dissipation (P_R)128 W

Frequently asked questions

What avalanche energy rating does the SPP15P10P have?

The device is rated for an avalanche energy of 230 mJ per single pulse.

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