SPP15P10P is a P-channel enhancement mode small-signal transistor with avalanche and dv/dt ratings.
This datasheet describes the Infineon SPP15P10P SIPMOS® small‑signal P‑channel transistor, including its maximum ratings, thermal behavior, and dynamic performance. The document is intended for designers who need detailed parameters for circuit integration.
Key specifications include a continuous drain current of –15 A at 25 °C, a power dissipation capability of 128 W, a gate‑source voltage rating of +20 V, and a typical on‑state resistance of 0.24 Ω. Thermal resistance (junction‑case) is 1.17 K/W and the device can withstand an avalanche energy of 230 mJ per pulse.
| Continuous drain current (Id) at 25 °C | -15 A |
|---|---|
| Maximum power dissipation (P_D) | 128 W |
| Gate‑source voltage rating (Vgs) | +20 V |
| Drain‑source breakdown voltage (Vds) | ~100 V |
| Thermal resistance, junction‑case (RθJC) | 1.17 K/W |
| Avalanche energy (Eas) per pulse | 230 mJ |
The device can conduct a continuous drain current of –15 A at 25 °C.
It is rated for a maximum power dissipation of 128 W.
The gate‑source voltage rating is +20 V.