The document describes the features and characteristics of a product named VDS.
This datasheet provides detailed electrical, thermal, and mechanical specifications for the Infineon SPP04N50C3 and SPA04N50C3 Cool MOS™ power transistors. It includes maximum ratings, characteristic curves, and typical performance parameters for both the TO‑220 and FullPAK packages.
Key sections cover maximum ratings, thermal characteristics, electrical characteristics, transient thermal impedance, typical output and transfer characteristics, and reference dimensions. The document also contains safety and warranty notices from Infineon Technologies AG.
| Continuous drain current (Id) at 25 °C | 45 A |
|---|---|
| Pulsed drain current (Id,pulse) | 13.5 A |
| Avalanche energy, single pulse (Eas) | 130 mJ |
| Gate‑source voltage rating (Vgs) | +20 V (continuous), +30 V (AC) |
| Drain‑source breakdown voltage (Vds) | 500 V |
| On‑state resistance (Rds(on)) typical | 0.85 mΩ |
| Power dissipation at 25 °C (P_D) | 50 W |
| Thermal resistance junction‑to‑case (Rjc) typical | 2.5 K/W |
The maximum continuous drain current at 25 °C is 45 A.
It can withstand up to 130 mJ of avalanche energy per single pulse.
The device is rated for a continuous gate‑source voltage of +20 V and an AC rating of +30 V.
Typical on‑state resistance (Rds(on)) is about 0.85 mΩ at 10 V gate bias.