This document is about NXP's BUK9013 transistor data sheet, which introduces the performance, characteristics and parameters of the transistor.
The SPP04N50C3 is a Cool MOS™ power transistor featuring ultra‑low gate charge, high voltage capability, and low effective capacitances. The document lists its key features, package options (PG‑TO‑220‑3‑31, FullPAK), and compliance information such as RoHS and JEDEC qualification.
Detailed sections cover maximum ratings (continuous and pulsed drain current, avalanche energy, gate‑source voltage), thermal characteristics (junction‑to‑case and junction‑to‑ambient resistances), electrical characteristics (breakdown voltage, on‑state resistance, transconductance, capacitances), transient thermal impedance, and typical output curves. Reference dimensions and legal notices conclude the handbook.
| Continuous drain current (Id) at 25°C | 45 A |
|---|---|
| Gate‑source voltage (Vgs) max | 20 V |
| Operating temperature range | -55 °C to +150 °C |
| Drain‑source breakdown voltage (Vds) | 500 V |
| On‑state resistance (Rds(on)) typical | 0.95 mΩ |
The device can handle a continuous drain current of 45 A at 25 °C.
The maximum gate‑source voltage is 20 V.
Typical on‑state resistance is about 0.95 mΩ at Vgs = 10 V and Id = 2.8 A.