BA592/BA892 is a low-power silicon RF switching diode, mainly used in TV/VTR tuners and mobile devices. It has a low forward resistance (typically 0.45Ω@3mA) and small parasitic capacitance.
The BA592 and BA892 series are silicon RF switching diodes designed for band switching in TV/VTR tuners and mobile applications. They offer very low forward resistance and small capacitance, making them suitable for high‑frequency signal paths.
The datasheet provides maximum ratings such as a 35 V reverse voltage and 100 mA forward current, as well as detailed DC and AC characteristics, diode capacitance versus frequency, and insertion loss for various configurations.
| Reverse voltage (Vp) | 35 V |
|---|---|
| Forward current (If) | 100 mA |
| Maximum junction temperature | 150 °C |
| Operating temperature range | -55 °C to 125 °C |
| Typical diode capacitance at 1 MHz (Ve=1 V) | 0.92 pF |
| Typical forward resistance at 3 mA, 100 MHz | 0.45 Ω |
The diodes are rated for a maximum reverse voltage of 35 V.
Typical forward resistance is 0.45 Ω under those conditions.
The reverse leakage current is specified as 20 nA.
Typical capacitance is 0.92 pF when measured at 1 MHz with 1 V bias.