Infineon BA592/BA892 Silicon RF Switching Diode Datasheet

BA592/BA892 is a silicon RF switching diode from Fujistu, which is used for band switching in TV/VTR tuners and mobile applications. It features very low forward resistance (typical 0.45 ohm @ 3mA) and small parasitic capacitance.


Infineon BA592/BA892 Silicon RF Switching Diode Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
423 KB
Published
06 April, 2012
Updated
30 September, 2023
Models
BA592, BA892
MD5 checksum
FB5E24BB0818EE3F1FDB5BA83CA68D21

About this manual

The BA592/BA892 series are silicon RF switching diodes intended for band switching in TV/VTR tuners and mobile applications. They feature very low forward resistance and small capacitance, available in several package types such as SOT-23 and SMD.

The datasheet provides maximum ratings, thermal resistance, DC and AC electrical characteristics, capacitance versus frequency, and insertion loss data. Key parameters include a reverse voltage of 35 V, forward current of 100 mA, and operating temperature range from –55 °C to 125 °C.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • DC Characteristics
  • AC Characteristics
  • Diode Capacitance
  • Insertion Loss
  • Package Configuration

Specifications

Reverse voltage (Vp)35 V
Forward current (Ir)100 mA
Junction temperature150 °C
Operating temperature range-55 … 125 °C
Reverse current (Ip) max20 nA
Forward voltage at 1 V1 V
Diode capacitance at 1 MHz0.65 pF
Forward resistance at 3 mA, 100 MHz0.45 Ω

Frequently asked questions

What is the maximum reverse voltage for the BA592/BA892 diodes?

The maximum reverse voltage is 35 V.

What is the typical forward resistance at 3 mA and 100 MHz?

The typical forward resistance is 0.45 Ω.

What is the operating temperature range of these diodes?

They operate from –55 °C to 125 °C.

What is the maximum forward current rating?

The diodes are rated for a forward current of 100 mA.

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