BF908 and BF908R are dual-gate MOS-FETs with high forward transfer admittance and high forward transfer admittance to input capacitance ratio produced by Philips Semiconductors. They can be used for VHF and UHF applications with 12V supply voltage, such as television tuners and professional communications equipment.
This document is a product specification datasheet for the Philips BF908 and BF908R, which are depletion type field-effect transistors (MOS-FETs). The devices feature high forward transfer admittance and are designed as low noise gain controlled amplifiers suitable for frequencies up to 1 GHz. They are available in plastic microminiature SOT143 or SOT143R packages.
| Package type | SOT143 or SOT143R |
|---|---|
| Device type | Depletion type field-effect transistor |
| Max drain-source voltage (BF908) | 12 V |
They are used in VHF and UHF applications with a 12 V supply voltage, such as television tuners and professional communications equipment.
Yes, the transistors are protected by integrated back-to-back diodes between gates and source.