BF908WR is a N-channel dual-gate MOS-FET produced by Philips Semiconductors. The product has high forward transfer admittance, short channel transistor, high forward transfer admittance to input capacitance ratio, low noise gain controlled amplifier up to 1 GHz. It is suitable for 12 V supply voltage VHF and UHF applications, such as television tuners and professional communications equipment.
This document is a preliminary data sheet for the Philips BF908WR, an N-channel depletion type field effect transistor. It describes the device as having high forward transfer admittance and being suitable for low noise gain controlled amplifiers up to 1 GHz.
The datasheet provides comprehensive technical information including pinning diagrams, quick reference data, limiting values, thermal characteristics, static and dynamic electrical parameters, and typical characteristic curves. It also includes package outline dimensions for the SOT343R plastic microminiature package.
| Drain-source voltage (VDS) | 12 V |
|---|---|
| Drain current (ID) | 40 mA |
| Total power dissipation (Ptot) | 300 mW |
| Operating junction temperature (Tj) | +150 °C |
| Input capacitance at gate 1 (Cigs) | 3.1 pF |
| Noise figure (f = 800 MHz) | 2.5 dB |
The maximum drain-source voltage is 12 V.
Yes, it supports low noise gain controlled amplifier operation up to 1 GHz.