Key facts
- Brand
- Infineon
- Model
- TDA21106
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Infineon TDA21106 High Speed Driver Data Sheet
The TDA21106 is a dual high‑speed driver designed to drive N‑Channel low‑side and high‑side MOSFETs in half‑bridge configurations. It targets applications such as multi‑phase CPU supplies, VRM modules, motor drives, and Class‑D audio amplifiers, offering fast rise/fall times and low switching losses.
Key features include bootstrapped high‑side drive, adjustable high‑side gate voltage, integrated bootstrap diode, adaptive gate‑drive control, and a shutdown mode for low quiescent current. The device is supplied in a P‑DSO‑8 package and is pin‑compatible with TDA21101G and HIP6601B.
Infineon TDA21106 specifications
| Maximum switching frequency | up to 2 MHz |
|---|---|
| Peak sink current | more than 4 A |
| High‑side gate drive voltage range | 6 V to 12 V |
| Maximum duty cycle | 2 % |
| Operating temperature range | -55 °C to 150 °C |
All Infineon TDA21106 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum switching frequency of the TDA21106?
The driver supports frequencies up to 2 MHz.
How much peak current can the TDA21106 sink?
It can sink more than 4 A of peak current.
What is the adjustable voltage range for the high‑side MOSFET gate drive?
The high‑side gate drive voltage can be set between 6 V and 12 V via the PVCC pin.
Which package does the TDA21106 use?
The device is supplied in a P‑DSO‑8 package.