This document is about the specifications of NXP's P-TO220-3-31
The Infineon SPP02N80C3 and SPA02N80C3 are high‑voltage, low‑gate‑charge power MOSFETs offered in a fully isolated PG‑TO220‑3‑31 (FullPAK) package. They feature an 800 V drain‑source breakdown voltage, 2 A continuous drain current, and ultra‑low on‑state resistance.
The document provides maximum ratings, thermal characteristics, electrical parameters, transient thermal impedance, safe operating area, gate‑charge data, and package dimensions, along with legal and warranty notices.
| Avalanche Energy (single pulse) | 90 mJ |
|---|---|
| Power Dissipation at 25 °C (PD) | 42 W |
| Package | PG‑TO220‑3‑31 (FullPAK) |
They are supplied in a PG‑TO220‑3‑31 (FullPAK) fully isolated package.