This document is the specification of NXP 10-05 Rev. 2.4 P-Channel MOSFETs
This document provides the electrical, thermal and mechanical specifications for Infineon's SPD02N60C3 and SPU02N60C3 Cool MOS™ power transistors. It includes maximum ratings, characteristic curves, and package information for the TO‑252 and TO‑251 variants.
Key data such as continuous drain current, breakdown voltage, on‑resistance, gate charge and switching loss parameters are listed, along with safe operating area and transient thermal impedance graphs to aid designers in selecting the appropriate device for high‑voltage applications.
| Power dissipation at 25 °C (Pd) | 29 W |
|---|---|
| Single‑pulse avalanche energy (Eas) | 50 mJ |