SPD02N60C3/SPU02N60C3 is a high voltage power transistor of Cool MOS™ series, with features such as ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and 150°C operating temperature
This datasheet provides the key specifications for Infineon's SPDO2N60C3 power MOSFET, a high‑voltage device with ultra‑low gate charge and low on‑resistance. It lists maximum ratings, thermal and electrical characteristics, gate‑charge behavior, and typical performance curves.
The document also includes package information, dimensions for the P‑TO252 and P‑TO251 packages, and safety notices. It is intended for designers who need detailed parameters for circuit design and reliability analysis.
| Continuous drain current (Id) | 1.8 A |
|---|---|
| Gate threshold voltage (Vgs(th)) | 2.1‑3.9 V |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Avalanche energy (single pulse) | 50 mJ |
| Power dissipation (Pd) at 25 °C | 25 W |
| Operating temperature range | -55 °C to +150 °C |
| Package type | P‑TO252 (also P‑TO251) |
The device can conduct a continuous drain current of 1.8 A at 25 °C.
The gate threshold voltage is between 2.1 V and 3.9 V.
The drain‑source breakdown voltage is rated at 600 V.
It operates from –55 °C up to +150 °C.