SGP30N60HS SGW30N60HS is a high-voltage IGBT from Infineon. The device is manufactured using NPT-technology and features low Eoff, short circuit withstand time and high operating frequency.
This datasheet provides the electrical, thermal and switching specifications for Infineon's SGP30N60HS (TO‑220) and SGW30N60HS (TO‑247) 600 V IGBT modules. It includes maximum ratings, thermal resistance values, characteristic curves and typical performance graphs.
The document also lists design highlights such as 30 % lower Eo, 10 µs short‑circuit withstand time, operation above 30 kHz, and compliance with RoHS and JEDEC qualifications. Contact information for Infineon Technologies AG is provided at the end of the sheet.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| DC collector current (IC) | 20 A |
| Power dissipation (P_D) | 250 W |
| Short‑circuit withstand time | 10 µs |
| Designed switching frequency | > 30 kHz |
The modules can withstand a short circuit for 10 µs.
The maximum collector‑emitter voltage is 600 V.
The devices are rated for a power dissipation of 250 W.