This document describes the features of SGP30N60 and SGW30N60 fast IGBT products, including lower Eoff, low conduction losses, short circuit withstand time, NPT technology application, and JEDEC certification.
Infineon’s SGP30N60 and SGW30N60 are fast IGBTs built with NPT‑technology, offering about 75 % lower turn‑off energy compared with previous generations. They are designed for motor‑control and inverter applications and meet JEDEC qualification and RoHS compliance.
Key electrical and thermal parameters include a collector‑emitter voltage of 600 V, a continuous collector current of 30 A, a short‑circuit withstand time of 10 µs, and a power dissipation rating of 250 W. Thermal resistance values are 0.5 K/W (junction‑case) and 62 K/W (junction‑ambient) for the TO‑220 package, and 40 K/W for the TO‑247 package. Switching characteristics such as turn‑on delay (44 ns) and turn‑off delay (291 ns) are provided for both 25 °C and 150 °C junction temperatures.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Continuous collector current (IC) | 30 A |
| Short‑circuit withstand time | 10 µs |
| Power dissipation (PD) | 250 W |
| Thermal resistance, junction‑case (RθJC) | 0.5 K/W |
| Thermal resistance, junction‑ambient (RθJA) – TO‑220 | 62 K/W |
| Turn‑on delay (tON) | 44 ns (typical, 25 °C) |
| Turn‑off delay (tOFF) | 291 ns (typical, 25 °C) |
The devices can withstand a short circuit for 10 µs.
The maximum collector‑emitter voltage is 600 V and the continuous collector current is 30 A.
The rated power dissipation is 250 W.