BSP171P SIPMOS® Small-Signal-Transistor is an enhancement mode P-channel device with logic level, avalanche rated, dv/dt rated and Pb-free lead plating, RoHS compliant.
The Infineon BSP171P is a small‑signal P‑channel MOSFET offered in a PG‑SOT‑223 package. The document provides detailed electrical and thermal specifications, maximum ratings, and characteristic curves for designers.
Key sections cover product summary, maximum ratings, thermal and electrical characteristics, dynamic parameters such as capacitances and switching times, as well as package dimensions and outline.
| Continuous drain current (Id) | -1.9 A |
|---|---|
| Pulsed drain current (Id,pulse) | -7.6 A |
| Drain‑source breakdown voltage (VDS) | 60 V |
| Gate threshold voltage (VGS(th)) | 2 V |
| On‑state resistance (RDS(on)) max | 0.3 Ω |
| Input capacitance (Ciss) typ | 365 pF |
| Output capacitance (Coss) typ | 105 pF |
| Reverse transfer capacitance (Crss) typ | 40 pF |
| Turn‑on delay time (tON) typ | 6 ns |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑SOT‑223 |
The continuous drain current is rated at -1.9 A at 25 °C.
The device can withstand up to 60 V drain‑source breakdown voltage.
It is supplied in a PG‑SOT‑223 surface‑mount package.
It is rated for operation from -55 °C up to 150 °C.