The BSP317P SIPMOS is a logic-level N-channel enhancement mode MOSFET from Texas Instruments with a maximum VDS of -250V and a maximum Ptot of 1.8W, with an operating temperature of -55-150℃.
The Infineon BSP317P is a P‑channel small‑signal MOSFET presented in a PG‑SOT‑223 package. The document provides a product summary, maximum ratings, thermal characteristics, and detailed electrical parameters such as drain current, breakdown voltage, and on‑state resistance.
Key sections include maximum ratings, thermal resistance, static and dynamic electrical characteristics, gate‑charge data, safe operating area curves, and typical output characteristics. The final page contains legal notices and contact information for Infineon Technologies AG.
| Continuous drain current (Id) | -0.43 A (typ at 25 °C) |
|---|---|
| Pulsed drain current (Id,puls) | -1.72 A (at 25 °C) |
| Drain‑source breakdown voltage (Vdss) | -250 V |
| Maximum power dissipation (Pmax) | 1.8 W (at 25 °C) |
| Operating temperature range | -59 °C to +150 °C |
The maximum continuous drain current is -0.43 A at 25 °C.
The device can dissipate up to 1.8 W at 25 °C.
The breakdown voltage is specified as -250 V.
It is rated for operation from -59 °C up to +150 °C.