The BFG 235 is a NPN Silicon RF Transistor produced by Texas Instruments. It is used for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA. It is also suitable for DECT and PCN systems power amplifiers. The BFG 235 has an integrated emitter ballast resistor and a fT of 5.5 GHz.
This document is a technical datasheet for the Infineon Technologies AG BFG 235, an NPN Silicon RF Transistor. It is designed for use as a low-distortion broadband output amplifier stage in antenna and telecommunication systems operating up to 2 GHz at collector currents between 120 mA and 250 mA.
| Collector-emitter voltage (VcEO) | 15 V |
|---|---|
| Noise figure (F) | 2.7 dB |
It is intended for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, as well as power amplifiers for DECT and PCN systems.
The maximum collector-emitter voltage (VCEO) is rated at 15 V.