The document describes the features and characteristics of the 2005-10-11 BFG235 1 NPN Silicon RF Transistor, which is suitable for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, and has an integrated emitter ballast resistor.
The BFG235 1NPN silicon RF transistor is intended for low‑distortion broadband output‑amplifier stages in antenna and telecommunication systems up to 2 GHz, as well as power amplifiers for DECT and PCN systems. It features an integrated emitter ballast resistor and a transition frequency of 5.5 GHz.
The datasheet provides maximum ratings, DC and AC electrical characteristics, thermal resistance data, and package dimensions (SOT‑223). Key parameters include a collector‑emitter voltage of 15 V, collector current up to 300 mA, and a power dissipation capability of 2 W.
| Collector‑Emitter Voltage (VCEO) | 15 V |
|---|---|
| Collector‑Emitter Voltage (VCES) | 25 V |
| Collector‑Base Voltage (VCBO) | 25 V |
| Emitter‑Base Voltage (VEBO) | 2 V |
| Collector Current (IC) | 300 mA |
| Base Current (IB) | 40 mA |
| Maximum Power Dissipation | 2 W |
| Junction Temperature (Tj) | 150 °C |
| Thermal Resistance (RthJS) | ≤ 35 K/W |
| Transition Frequency (fT) | 5.5 GHz |
| Package Type | SOT‑223 |
The maximum collector‑emitter voltage is 15 V.
The transition frequency is 5.5 GHz.
The BFG235 is supplied in an SOT‑223 surface‑mount package.
The device can handle up to 300 mA of collector current.