Transistor Manuals

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Manuals

37

Models

2

Brands

3

Languages

EN · ZH · JA

Last added

2026-10-01

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Featured Transistor manuals

Kexin 2SD882-HF Transistor Datasheet

Datasheet 1 pages · 399 KB · EN

The 2SD882-HF is an SMD‑type NPN transistor with excellent hFE linearity and a wide gain range. It is offered in several variants (R, Q, P, E) covering hFE ranges from 60 to 400.

The datasheet lists absolute maximum ratings such as VCB0 40 V, VCEO 30 V, VEBO 6 V, and a continuous collector current of 3 A. A Pb‑Free package option is available, indicated by the G‑suffix on the marking.

Covers: Features · Absolute Maximum Ratings · Electrical Characteristics · Classification of hfe · Marking · Pb‑Free Package

Panasonic 2SC2377 Transistor Datasheet

Datasheet 4 pages · 110 KB · EN

The 2SC2377 is a silicon NPN epitaxial planar transistor optimized for high‑frequency RF amplification in FM/AM radios. It features a high transition frequency, low noise figure, and a convenient M‑type package for easy insertion.

The document provides absolute maximum ratings, detailed electrical characteristics, and a series of performance graphs covering parameters such as transition frequency, noise figure, power gain, and capacitances. Export and usage precautions are also included.

Covers: Features · Absolute Maximum Ratings · Electrical Characteristics · Performance Graphs · Export and Usage Precautions

Mitsubishi M54513P/FP Transistor Array Datasheet

Datasheet 3 pages · 62 KB · EN

The M54513P/FP transistor array consists of eight NPN transistor circuits, each capable of handling up to 50 mA collector current. It features a high breakdown voltage of 40 V, low input‑current supply, and operates from –20 °C to +75 °C, making it suitable for driving LED and lamp indication elements.

The datasheet provides absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics such as input voltage range (0.5‑10 V), power dissipation (1.79 W for P package, 1.10 W for FP package), and switching times. Pin configurations for the 18‑pin and 20‑pin packages are also listed.

Covers: Description · Features · Application · Pin Configuration · Package Types · Absolute Maximum Ratings

MITSUBISHI M63802P/FP/GP/KP Manual

Datasheet 4 pages · 56 KB · EN

The M63802 series is a seven‑unit NPN transistor array offering 300 mA per circuit. It is supplied in four package configurations (P, FP, GP, KP) and is designed for high‑current driving with low input current, suitable for LED and lamp indication circuits.

Key specifications include a collector‑emitter breakdown voltage up to 35 V, a maximum collector current of 300 mA per circuit, and an operating temperature range from –40 °C to +85 °C. The datasheet provides absolute maximum ratings, recommended operating conditions, and detailed electrical and switching characteristics for each package variant.

Covers: Description · Features · Application · Pin Configuration · Absolute Maximum Ratings · Recommended Operating Conditions

Latest Transistor manuals

• Kexin 2SD882-HF Transistor Datasheet

  Datasheet 1 pages · 399 KB · EN

  The Kexin 2SD882-HF SMD NPN transistor datasheet provides specifications, ratings, electrical characteristics, and packaging details.

• Panasonic 2SC2377 Transistor Datasheet

  Datasheet 4 pages · 110 KB · EN

  Technical specifications and performance graphs for the Panasonic 2SC2377 silicon NPN epitaxial planar transistor.

• NXP BLF8G20LS-230V transistor

  230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

• NXP BLF25M612 BLF25M612G transistor

  12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

• NXP BLF8G09LS-400PW 8G09LS-400PGW transistor

  400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

• NXP BLF888D BLF888DS transistor

  A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

• NXP BLF8G10LS-300P transistor

  300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

• NXP BLC8G27LS-100AV transistor

  100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

• NXP BLF8G09LS-400PW transistor

  400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

• NXP BLP10H605 transistor

  A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

• NXP BLF8G27LS-100 transistor

  100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

• NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor

  230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

• NXP BLF184XR_BLF184XRS transistor

  A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

• CET H2288 Transistor

  FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.

• CET CEG2288 Transistor

  FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.

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