BCW67 and BCW68 are PNP silicon AF transistors for general AF applications. They have high current gain and low collector-emitter saturation voltage. The complementary types are BCW65 and BCW66 (NPN).
This document is a datasheet for the Infineon BCW67 and BCW68 series of PNP Silicon AF transistors. These components are designed for general AF applications and are available in SOT23 packages with various suffixes (A, B, C, F, G, H). The datasheet provides maximum ratings, electrical characteristics, and graphical data regarding power dissipation, transition frequency, and saturation voltages.
| Collector-emitter voltage | 32 V (BCW67), 45 V (BCW68) |
|---|---|
| DC collector current | 800 mA |
| Peak collector current | 1 A |
| Total power dissipation | 330 mW (Ts = 79 °C) |
| Junction temperature | 150 °C |
The complementary types are BCW65 and BCW66 (NPN).
The storage temperature range is from -65 °C to 150 °C.