BCW 67 BCW 68 are bipolar junction transistors with high current gain and low collector-emitter saturation voltage. They are suitable for general audio applications.
This document is a technical datasheet for the Infineon Technologies BCW67 and BCW68 series of PNP Silicon AF (Audio Frequency) transistors. These devices are designed for general audio frequency applications, offering high current gain and low collector-emitter saturation voltage. The complementary NPN types are identified as BCW65 and BCW66.
| Collector-emitter voltage (VCEO) | 32 V (BCW67), 45 V (BCW68) |
|---|---|
| DC collector current | 800 mA |
| Peak collector current | 1 A |
| Total power dissipation (Ts = 79 °C) | 330 mW |
| Junction temperature | -65 ... 150 °C |
The complementary NPN types are BCW65 and BCW66.
The minimum DC current gain is 35.
The transition frequency is 200 MHz.