BCV62 is a PNP silicon double transistor designed for use as a current mirror. It features good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.
The BCV62 series from Infineon Technologies is a PNP silicon double transistor intended for use as a current mirror. It offers good thermal coupling, high current gain, and low collector‑emitter saturation voltage.
The device is supplied in a SOT143 package and includes detailed electrical characteristics such as a 30 V collector‑emitter voltage, 100 mA continuous collector current, and a maximum power dissipation of 300 mW. Thermal resistance is specified at less than 170 K/W, and the transition frequency reaches 100 MHz.
| Collector‑emitter voltage (VCEO) | 30 V |
|---|---|
| Collector‑base voltage (VCBO) | 30 V |
| Emitter‑base voltage (VEB) | 6 V |
| DC collector current (Ic) | 100 mA |
| Peak collector current (Icm) | 200 mA |
| Base peak current (Ibm) | 200 mA |
| Total power dissipation (Ptot) | 300 mW |
| Maximum junction temperature | 150 °C |
| Storage temperature range | -65 °C to 150 °C |
| Package type | SOT143 |
The BCV62 can withstand up to 30 V between collector and emitter.
It is supplied in a SOT143 surface‑mount package.
Infineon Technologies AG is located at St.-Martin-Strasse 53, 81669 München, Germany.