This document describes the features and characteristics of the BCV62 PNP Silicon Double Transistor. It can be used as a current mirror and has good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.
The Infineon BCV62 is a PNP Silicon Double Transistor designed specifically to be used as a current mirror. It features good thermal coupling and Vge matching, high current gain, and low collector-emitter saturation voltage. The device is available in three types (BCV62A, BCV62B, BCV62C) and is packaged in the SOT143 format.
| Collector-emitter voltage | 30 V |
|---|---|
| DC collector current | 100 mA |
| Peak collector current | 200 mA |
| Total power dissipation | 300 mW |
| Junction temperature | 150 °C |
| Transition frequency | 250 MHz |
The BCV62 is to be used as a current mirror.
The maximum junction temperature is 150 °C.
The DC collector current rating is 100 mA.