BCV61 is an NPN Silicon Double Transistor, To be used as a current mirror, with Good thermal coupling and VBE matching, High current gain and Low collector-emitter saturation voltage.
This document is a technical datasheet for the Infineon Technologies BCV61 series of NPN silicon double transistors. These devices are designed specifically to be used as current mirrors, offering good thermal coupling and Vge matching between the two internal transistors.
The datasheet provides comprehensive electrical characteristics at 25°C, including DC parameters such as collector-emitter breakdown voltage, DC current gain (hFE) for variants A, B, and C, and saturation voltages. It also lists AC characteristics like transition frequency and capacitance values.
| Collector-emitter voltage (VcEO) | 30 V |
|---|---|
| DC collector current (Ie) | 100 mA |
| Peak collector current (lou) | 200 mA |
| Total power dissipation (Ptot) at Tj=99°C | 300 mW |
| Junction temperature range | -65 ... 150 °C |
| Transition frequency (fT) | 250 MHz |
It is designed to be used as a current mirror.
The device uses the SOT143 package.