BC817W, BC818W are NPN silicon AF transistors for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. The complementary types are BC807W, BC808W (PNP).
The document is a product datasheet for the BC817W and BC818W series of NPN silicon transistors. These components are intended for general audio frequency (AF) applications, featuring high collector current capabilities, high current gain, and low collector-emitter saturation voltage. The datasheet covers both the NPN types listed here and their complementary PNP counterparts (BC807W/BC808W). This manual is written in Chinese.
| Collector-emitter voltage (VCEO) | 45 V for BC817W, 25 V for BC818W |
|---|---|
| Emitter-base voltage (VEBO) | 5 V |
| DC collector current (IC) | 500 mA |
| Peak collector current (ICM) | 1 A |
| Total power dissipation (Ptot) at TS=130°C | 250 mW |
| Junction temperature (Tj) | 150 °C |
They are designed for general audio frequency (AF) applications.
The maximum DC collector current is 500 mA.