BC817 and BC818 are NPN silicon AF transistors, suitable for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. There are also complementary types BC807 and BC808 (PNP).
This document is a datasheet for the Infineon BC817 and BC818 series of NPN silicon AF transistors. These components are designed for general AF applications and offer high collector current, high current gain, and low collector-emitter saturation voltage. Complementary PNP types (BC807, BC808) are also available.
| Collector-emitter voltage | 45 V (BC817), 25 V (BC818) |
|---|---|
| DC collector current | 500 mA |
| Peak collector current | 1 A |
| Total power dissipation | 330 mW |
| Junction temperature | -65 ... 150 °C |
| Transition frequency | 170 MHz |
The complementary types are BC807 and BC808 (PNP).
Pin 1 is Base (B), Pin 2 is Emitter (E), and Pin 3 is Collector (C).
The maximum junction temperature is 150 °C.