BC817UPN is a NPN/PNP Silicon Transistor Array, for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, and two (galvanic) internal isolated NPN/PNP Transistors in one package.
The document describes the BC817UPN, an NPN/PNP silicon transistor array manufactured by Infineon Technologies. It features two galvanically isolated transistors within a single package, making it suitable for audio frequency (AF) input stages and driver applications. Key characteristics include high current gain and low collector-emitter saturation voltage.
| Collector-emitter voltage (VCEO) | 45 V |
|---|---|
| DC collector current (IC) | 500 mA |
| Peak collector current (Icm) | 1 A |
| Total power dissipation (Ptot) at Tg = 25°C | 330 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Transition frequency (fT) | 170 MHz |
The maximum DC collector current is 500 mA.