BC817U is a NPN silicon transistor array designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and two internally isolated transistors with good matching in one package.
This document is a datasheet for the Infineon BC817U, an NPN Silicon Transistor Array designed for AF input stages and driver applications. Key features include high current gain, low collector-emitter saturation voltage, and two galvanically isolated transistors with good matching within a single SC74 package.
The datasheet provides comprehensive electrical characteristics at 25°C, including DC parameters such as collector-emitter breakdown voltage, DC current gain (hFE), and saturation voltages. It also lists AC characteristics like transition frequency and capacitance values, along with maximum ratings for voltage, current, and power dissipation.
| Collector-emitter voltage | 45 V |
|---|---|
| Collector-base voltage | 50 V |
| Emitter-base voltage | 5 V |
| DC collector current | 500 mA |
| Peak collector current | 1 A |
| Total power dissipation | 330 mW |
| Junction temperature | 150 °C |
| Transition frequency | 170 MHz |
The device is intended for AF input stages and driver applications.
The package contains two galvanically isolated transistors.
The maximum DC collector current is 500 mA.