BC807, BC808 are PNP Silicon AF Transistors, which have high collector current, high current gain and low collector-emitter saturation voltage.
The document details the BC807 and BC808 series of PNP Silicon AF Transistors designed for general AF applications. Key features highlighted include high collector current, high current gain, and low collector-emitter saturation voltage. The datasheet covers various package types including SOT23 variants marked as 5As through 5Gs.
| Total power dissipation (Ptotm) | 330 mW at TS = 79 °C |
|---|---|
| Junction temperature (Tj) | 150 °C |
The maximum transition frequency (fT) is 200 MHz when IC = 50 mA and VCE = 5 V.
The transistors are available in SOT23 packages with various markings including 5As, 5Bs, 5Cs, 5Es, 5Fs, and 5Gs.
The maximum permissible junction temperature (Tj) for these transistors is 150 °C.