BC807W, BC808W are Infineon PNP silicon AF transistors, used for general AF applications, with high collector current, high current gain, low collector-emitter saturation voltage.
This document is a datasheet for the BC807W and BC808W PNP Silicon AF Transistors, designed for general AF applications. Key features include high collector current, high current gain, and low collector-emitter saturation voltage. The transistors are available in SOT323 packages with various type markings (5As, 5Bs, 5Cs, 5Es, 5Fs, 5Gs).
| Collector-emitter voltage | 45 V (BC808W), 25 V (BC807W) |
|---|---|
| Collector-base voltage | 50 V (BC808W), 30 V (BC807W) |
| Emitter-base voltage | 5 V |
| DC collector current | 500 mA |
| Peak collector current | 1 A |
| Total power dissipation | 250 mW (BC808W), 150 mW (BC807W) |
| Junction temperature | -65 ... 150 °C |
| Transition frequency | 200 MHz |
The complementary types are BC817W and BC818W (NPN).
The maximum collector-emitter saturation voltage is 0.7 V when IC = 500 mA and IB = 50 mA.
The maximum base-emitter saturation voltage is 1.2 V when IC = 500 mA and IB = 50 mA.