The BAT 64 series are a range of silicon Schottky diodes for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. These diodes feature integrated diffused guard rings and low forward voltages.
This document is a technical datasheet for the Infineon Technologies BAT 64 series of Silicon Schottky Diodes. The device is designed for low-loss, fast-recovery applications including meter protection, bias isolation, and clamping.
The datasheet provides comprehensive electrical characteristics at 25°C, including DC parameters such as reverse current and forward voltage across various currents, as well as AC characteristics like diode capacitance. It also details maximum ratings for voltage, current, power dissipation, and temperature limits.
| Diode reverse voltage | 40 V |
|---|---|
| Forward current | 250 mA |
| Average forward current (60/60Hz, sinus) | 120 mA |
| Surge forward current (t < 10ms) | 800 mA |
| Total power dissipation, Tc = 25 °C | 250 mW |
| Junction temperature | -55 ... 150 °C |
The device is intended for low-loss, fast-recovery, meter protection, bias isolation and clamping applications.
The maximum junction temperature rating is 150 °C.