SPP08N80C3, SPI08N80C3 SPA08N80C3 is a 800 V low on-resistance, high current power transistor, using new revolutionary high voltage technology, features ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances and improved transconductance.
The SPPO8N80C3, SPIO8N80C3, and SPA08N80C3 are Cool MOS™ power transistors offering ultra‑low gate charge, low on‑state resistance, and high voltage capability up to 800 V. They are supplied in fully isolated TO‑220 and TO‑262 packages and comply with RoHS and JEDEC standards.
The datasheet provides maximum ratings, detailed electrical characteristics, thermal resistance values, transient thermal impedance, and typical output curves. It also includes avalanche energy ratings, body‑diode forward characteristics, and package dimensions for design reference.
| Continuous drain current (Id) @ 25 °C | 8 A |
|---|---|
| On‑state resistance (Rds(on)) typical | 0.65 mΩ |
| Total gate charge (Qg) @ 640 V, 8 A | 40‑52 nC |
| Maximum power dissipation @ 25 °C | 104 W |
| Avalanche energy (single pulse) | 340 mJ |
The maximum continuous drain current is 8 A at 25 °C.
The typical on‑state resistance is 0.65 mΩ.
It can dissipate up to 104 W at 25 °C case temperature.