Key facts
- Brand
- Infineon
- Model
- BB867
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BB867-02V Silicon Tuning Diode Datasheet
The Infineon BB867-02V silicon tuning diode is presented with its high capacitance ratio, low series inductance and excellent matching achieved by an in‑line matching assembly. The document lists the package configuration, marking and key performance parameters for the component.
Detailed electrical characteristics are provided, including reverse voltage, forward current, temperature ranges, reverse current, capacitance values at various bias conditions and the capacitance ratio. Maximum ratings and typical values are given for design and reliability assessment.
Infineon BB867 specifications
| Reverse voltage (VR) | 30 V |
|---|---|
| Peak reverse voltage (VRM) | 35 V |
| Forward current (Ir) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
All Infineon BB867 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum reverse voltage rating of the BB867‑02V diode?
The diode is rated for a reverse voltage of 30 V.
What temperature range can the diode operate in?
It operates from –55 °C up to 150 °C.
What is the reverse voltage rating of the BB867-02V diode?
The diode reverse voltage rating is 30 V.
What is the typical forward current for the BB867-02V diode?
The typical forward current is 20 mA.