This document describes the features and characteristics of the BB867 silicon tuning diode, which is suitable for SAT - Indor units. It has a high capacitance ratio, low series inductance, and excellent uniformity and matching.
The Infineon BB867-02V silicon tuning diode is presented with its high capacitance ratio, low series inductance and excellent matching achieved by an in‑line matching assembly. The document lists the package configuration, marking and key performance parameters for the component.
Detailed electrical characteristics are provided, including reverse voltage, forward current, temperature ranges, reverse current, capacitance values at various bias conditions and the capacitance ratio. Maximum ratings and typical values are given for design and reliability assessment.
| Reverse voltage (VR) | 30 V |
|---|---|
| Peak reverse voltage (VRM) | 35 V |
| Forward current (Ir) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
The diode is rated for a reverse voltage of 30 V.
It operates from –55 °C up to 150 °C.
The forward current rating is 20 mA.