This document describes the features and characteristics of the BB867 silicon tuning diode. The diode has a high capacitance ratio, low series inductance, and excellent matching. It is suitable for SAT-Indor units. The document provides information on the model, package configuration, maximum ratings, and electrical characteristics of the product.
The Infineon BB867-02V silicon tuning diode is presented with its package configuration, high capacitance ratio, low series inductance, and excellent uniformity. The document lists the diode's maximum ratings, including reverse voltage, forward current, and temperature limits.
Detailed electrical characteristics are provided, covering DC and AC parameters such as reverse current, diode capacitance at various bias voltages, capacitance ratios, and series resistance. These specifications support design and application of the diode in SAT‑Indor units.
| Diode reverse voltage (VR) | 30 V |
|---|---|
| Peak reverse voltage (VeRM) | 35 V |
| Forward current (Ir) | 20 mA |
| Operating temperature range | -55 … 150 °C |
| Storage temperature range | -55 … 150 °C |
The diode reverse voltage rating is 30 V.
The typical forward current is 20 mA.
It operates from –55 °C to 150 °C.