BAV99 is a silicon switching diode launched by ON Semiconductor. It has the characteristics of high switching speed, high breakdown voltage and low power consumption. It is suitable for applications such as high-frequency switching power supply, battery charger, DC/DC converter
The BAV99 series silicon switching diodes from Infineon are intended for high‑speed switching applications. The document lists the various part numbers (BAV99, BAV99F, BAV99T, etc.) and their package types such as SOT‑23 and SOT‑363.
Key electrical specifications, maximum ratings, thermal resistance values, and package dimensions are presented, along with legal and safety notices for use in life‑support devices.
| Reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (VEM) | 85 V |
| Forward current (IF) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -65 … 150 °C |
The BAV99 diode can withstand a reverse voltage of 80 V.
The diode is rated for a continuous forward current of 200 mA.