BAV99 is a silicon switching diode produced by Texas Instruments. It has high switching speed, high reverse voltage, low power consumption and other characteristics, and can be applied to high-frequency switching circuits.
This datasheet provides the key specifications for the Infineon BAV99 family of silicon switching diodes. It lists maximum ratings such as reverse voltage, forward current, and power dissipation, as well as detailed electrical characteristics like forward voltage and reverse recovery time.
Package information, marking codes, and reel packaging details are also included, along with legal notices and contact information for Infineon Technologies AG.
| Reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (VEM) | 85 V |
| Forward current (If) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -65 to 150 °C |
| Thermal resistance (RθJC) BAV99 | < 360 °C/W |
The maximum reverse voltage is 80 V.
The diode is rated for a continuous forward current of 200 mA.
The junction temperature limit is 150 °C.
They can be stored from –65 °C up to 150 °C.