The BAV99 is a silicon switching diode produced by ON Semiconductor, with a maximum reverse voltage of 80V and a maximum forward current of 200mA. This diode can be used for high-speed switching applications and has a series pair configuration.
This document is a datasheet for the Infineon Technologies BAV99 series of silicon switching diodes. It details various package configurations including SOT23, TSFP-3, SOT363, SC74, and others, designed for high-speed switching applications.
The text provides maximum ratings such as a reverse voltage of 80V and forward current of 200mA. It also lists specific electrical characteristics like breakdown voltage, reverse current, and forward voltage at different temperatures.
| Diode reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (Vem) | 85 |
| Forward current (Ir) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Breakdown voltage (VBR) | 85 V |
| Diode capacitance (Cy) | 1.5 pF |
The maximum forward current rating is 200 mA.
The maximum reverse voltage is 80 V.