FQB50N06 / FQI50N06 60V N-Channel MOSFET is a low voltage switch device made by Fairchild. Its features are low on-state resistance, superior switching performance, and ability to withstand high energy pulses in avalanche and commutation mode.
The document describes the FQB50N06 and FQI50N06 devices, which are produced using Fairchild's proprietary planar stripe DMOS technology. These transistors feature low on-state resistance and superior switching performance, making them suitable for automotive applications, DC/DC converters, and power management in portable products.
The datasheet provides absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic parameters such as capacitance and gate charge, and typical characteristic curves. It also includes mechanical dimensions for the D2-PAK package.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 50 A |
| Maximum Junction Temperature | +175 °C |
| Total Gate Charge (Typical) | 31 nC |
The maximum junction temperature rating is +175°C.
Yes, the device is RoHS Compliant.