This document describes the features and characteristics of FQB50N06L / FQI50N06L 60V logic N-channel MOSFETs. These devices are suitable for low voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
This document is a technical datasheet for the FQB50N06L and FQI50N06L, which are 60V logic-level N-channel enhancement mode power field effect transistors. Produced using Fairchild's proprietary planar stripe DMOS technology, these devices are designed to minimize on-state resistance while providing superior switching performance for high-efficiency applications.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 52.4 A |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typical) | 0.021 Ω |
| Total Gate Charge (Typical) | 24.5 nC |
The maximum junction temperature rating is 175°C.