FQD19N10 / FQU19N10 100V N-Channel MOSFET is a high performance switching device manufactured by Fairchild Semiconductor International, with low on-state resistance, high frequency switching capability, small gate capacitance, etc., suitable for audio amplifiers, high efficiency switching DC/DC converters and DC motor control and other low voltage applications.
This document provides technical specifications for the FQD19N10 and FQU19N10, which are 15.6A, 100V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance, superior switching performance, and improved dv/dt capability.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 15.6 A |
| Continuous Drain Current (Tg = 100°C) | 9.8 A |
| Power Dissipation (Ts = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 2.5 °C/W |
The device operates and can be stored within a temperature range of -55 to +150 °C.