FQD19N10L/FQU19N10L is a 100V logic N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse endurance, and is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
This document is a technical datasheet for the Fairchild Semiconductor FQD19N10L and FQU19N10L devices. These are 15.6A, 100V logic level N-channel enhancement mode power field effect transistors produced using proprietary DMOS technology. They are designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as high efficiency DC/DC converters and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 15.6 A |
| Continuous Drain Current (Tj = 100°C) | 9.8 A |
| Pulsed Drain Current | 62.4 A |
| On-Resistance (Vgs = 10 V) | 0.12 Ohm typical |
| Gate Charge (typical) | 14 nC |
| Reverse Transfer Capacitance | 35 pF typical |
| Power Dissipation (Tc = 25°C) | 50 W |
| Operating Temperature Range | -55 to +150 °C |