This document describes the FDS6679AZ P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. This product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is specifically designed to minimize on-state resistance. It is suitable for power management and load switching applications common in notebook computers and portable battery packs.
This document is a datasheet for the Fairchild Semiconductor FDS6679AZ, a P-Channel PowerTrench MOSFET designed for power management and load switching applications. The device features a -30V drain-to-source voltage rating and a continuous drain current of -13A, utilizing advanced trench technology to minimize on-state resistance.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltages, on-state resistance values under various gate voltages, and dynamic switching parameters. It also includes typical characteristic curves illustrating performance regarding temperature, drain current, and gate voltage, along with safe operating area limits and thermal response data.
The HBM ESD protection level is 6 kV typical.
Yes, the device is RoHS compliant.