FDS6679 is a 30 volt P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It features faster switching speed and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is suitable for DC/DC converters, synchronous or conventional switching PWM controllers, and battery chargers.
The document is a technical specification sheet for the Fairchild Semiconductor FDS6679, a 30 Volt P-Channel PowerTrench MOSFET designed to improve efficiency in DC/DC converters and battery chargers. It highlights features such as high performance trench technology for low on-resistance and extended voltage range capabilities.
The datasheet details absolute maximum ratings including drain-source voltage of -30V, continuous drain current of -13A, and operating temperature ranges from -55°C to +175°C. It also provides comprehensive electrical characteristics tables covering off-state breakdown voltages, on-resistance values under various conditions, dynamic capacitance figures, and switching times.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +25 V |
| Operating Junction Temperature Range | -55 to +175 °C |
The device supports a continuous drain current of -13 A.
The component operates between -55 and +175 °C.
It has a maximum power dissipation of 25 W for single operation.