The VND7N04/VND7N04-1 VNP7N04FI/K7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS
The VND7NO4 series are monolithic power MOSFET devices built with STMicroelectronics VIPower MO technology. They replace standard MOSFETs in DC‑to‑50 kHz applications and include integrated over‑voltage clamp, linear current limiting, over‑temperature and short‑circuit protection, as well as diagnostic feedback via the input pin.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, thermal and mechanical data, and switching performance for the four device variants (VND7NO4, VND7NO4‑1, VNP7NO4FI, VNK7NO4FM).
| Drain‑source clamp voltage | 42 V |
|---|---|
| Continuous drain current | 7 A |
| Typical Rds(on) | 0.149 Ω |
| Thermal resistance (junction‑case) | 3.75 °C/W |
| Storage temperature range | -55 °C to 150 °C |
The devices are rated for storage temperatures from –55 °C up to 150 °C.
The typical turn‑on delay time is 50 ns.