This document describes the features and characteristics of the VND7N04, VND7N04-1, and VNK7N04FM 'OMNIFET' fully autoprotected power MOSFETs, released in March 2009 Rev 1 1/17 17. These MOSFETs are made using STMicroeletronics VIPower M0 Technology and are intended to replace standard power MOSFETs in DC to 50 KHz applications. They feature linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current drawn from input pin, diagnostic feedback, ESD protection, and direct access to the gate of the power MOSFET for analog driving.
This document describes the VND7N04, VND7N04-1, and VNK7N04FM, which are monolithic devices made using STMicroelectronics VIPower M0 Technology. They are intended for replacement of standard power MOSFETs in DC to 50 KHz applications and feature built-in thermal shut-down, linear current limitation, and overvoltage clamp protection.
| Drain-source clamp voltage | 42 V |
|---|---|
| Static drain-source on resistance | 0.14 Ω |
| Drain current limit | 7 A |
| Operating junction temperature | Internally limited |
| Storage temperature | -55 to 150 ° C |
| Overtemperature shutdown threshold | 150 ° C |
| Overtemperature reset threshold | 135 ° C |
The maximum drain-source clamp voltage is 42 V.
The operating junction temperature is internally limited.
The device shuts down at a minimum of 150 ° C.
The static drain-source on resistance is 0.14 Ω.